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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA220N075T
IXTP220N075T
V DSS
I D25
R DS(on)
= 75 V
= 220 A
≤ 4.5 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
75
75
V
V
V GSM
Transient
± 20
V
G
S
I D25
I LRMS
I DM
I AR
E AS
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
220
75
600
25
1.0
A
A
A
A
J
TO-220 (IXTP)
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 3.3 Ω
3
V/ns
G
D
S
(TAB)
P D
T C = 25 ° C
480
W
G = Gate
D = Drain
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
-55 ... +175
175
-55 ... +175
300
260
° C
° C
° C
° C
° C
S = Source TAB = Collector
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
rated
Low package inductance
Weight
TO-220
TO-263
3
2.5
g
g
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
75 V
High power density
Applications
Automotive
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.0
4.0
± 200
5
250
V
nA
μ A
μ A
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
R DS(on)
V GS = 10 V, I D = 25 A, Notes 1, 2
3.9
4.5
m Ω
High Current Switching
Applications
DS99611 (11/06)
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相关代理商/技术参数
IXTP22N15MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 22A I(D) | TO-220(5)
IXTP22N15MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 22A I(D) | TO-220(5)
IXTP22N20MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-220(5)
IXTP22N20MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-220(5)
IXTP230N075T2 功能描述:MOSFET 230 Amps 75V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP240N055T 功能描述:MOSFET 240 Amps 55V 3.3 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP24N15T 功能描述:MOSFET 24 Amps 150V 100 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP24P085T 功能描述:MOSFET 24 Amps 85V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube